The 2N6516 is an NPN silicon transistor in a TO-92 package, designed for high voltage driver and amplifier applications. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, and a continuous collector current of 500 mA. The power dissipation is 625 mW, with an operating and storage junction temperature range of -65 to +150 °C. The device features a maximum VCE(sat) of 0.35 V at IC=20mA and IB=2.0mA, and hFE ranges from 45 to 270 at IC=30mA. Base and emitter currents are rated at 250 mA. The part is RoHS compliant as indicated by the PBFREE suffix, and the TO-92 case hasEmitter-Base-Coll
300V 500MA 625MW TH TRANSISTOR-S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N6516APMPBFREETB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |