Central Semiconductor Corp. Bipolar Transistors - BJT 2N6432

The 2N6432 is a PNP silicon transistor in a TO-18 case, designed for high voltage amplifier applications. It has a collector-base voltage rating of 200 V, a collector-emitter voltage rating of 200 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 500 mA, and the power dissipation is 500 mW at ambient temperature. The junction temperature range is -65 to +200 °C. Electrical characteristics include a current gain (hFE) of 30 to 150 at VCE=10 V and IC=30 mA, a collector-emitter saturation voltage of 0.5 V at IC=20 mA and IB=2.0 mA, and a transition frequency of 50 MHz at VCE=20 V and IC=10 mA. The output capacitance is 6.0 pF at VCB=20 V and f=1.0 MHz.