Central Semiconductor Corp. Single Bipolar Transistors 2N6430 TIN/LEAD

The 2N6430 is an NPN silicon transistor in a TO-18 case, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 200 V, a collector-emitter voltage rating of 200 V, and a continuous collector current of 500 mA. Power dissipation is rated at 500 mW at ambient conditions. The device has an operating and storage junction temperature range of -65°C to +200°C. Electrical characteristics include a current gain (hFE) of 25 to 200 at 1 mA to 30 mA collector current and a transition frequency (fT) of 50 to 200 MHz at 10 mA. The TO-18 package has three leads: emitter, base, and collector. The TIN/LEAD suffix indicates a specific plating option not described in the electrical or mechanical specifications, but the core part parameters are defined for the 2N6430 series.