Central Semiconductor Corp. Single Bipolar Transistors 2N6430 PBFREE

The 2N6430 is an NPN silicon transistor in a TO-18 package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 200 V, a collector-emitter voltage rating of 200 V, and a continuous collector current of 500 mA. Power dissipation is rated at 1.8 W at TC=25°C. The device has a minimum current gain (hFE) of 25 at IC=1.0 mA and 40 at IC=10 mA, with fT of 50 MHz at VCE=20 V and IC=10 mA. The collector-emitter saturation voltage is 0.5 V maximum at IC=20 mA and IB=2.0 mA. The operating and storage junction temperature range is -65°C to +200°C. The thermal resistance from junction to case is 97.2 °C/W. The part is available in a lead-free variant with the PBFREE suffix, complying with RoHS requirements.