Central Semiconductor Corp. Bipolar Transistors - BJT 2N6298

The 2N6298 is a PNP silicon Darlington power transistor in a TO-66 package, designed for high gain amplifier and medium speed switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 8.0 A. The device dissipates up to 75 W and operates with a thermal resistance of 2.33 °C/W. The junction temperature range is -65 to +200 °C. Electrical characteristics include a collector-emitter saturation voltage of 3.0 V at 8.0 A collector current and 80 mA base current, and a minimum current gain of 100 at 8.0 A. Emitter-base voltage is rated at 5.0 V.