Central Semiconductor Corp. Bipolar Transistors - BJT 2N6261

Description
Bipolar Transistors - BJT NPN 4.0A 90Vcbo 80Vceo 0.5Vce
Description
Bipolar Transistors - BJT NPN 4.0A 90Vcbo 80Vceo 0.5Vce
Datasheet
Datasheet Summary
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Bipolar transistor for general-purpose amplification and switching, housed in a TO-66 case, with a continuous collector current of 4.0 A, collector-base voltage of 90 V, collector-emitter voltage of 80 V, collector-emitter saturation voltage of 0.5 V at 1.5 A collector current, and a current gain of at least 60 at 1.5 A collector current and 0.5 V collector-emitter voltage, with a transition frequency of 0.8 MHz.

Datasheet Summary
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Bipolar transistor for general-purpose amplification and switching, housed in a TO-66 case, with a continuous collector current of 4.0 A, collector-base voltage of 90 V, collector-emitter voltage of 80 V, collector-emitter saturation voltage of 0.5 V at 1.5 A collector current, and a current gain of at least 60 at 1.5 A collector current and 0.5 V collector-emitter voltage, with a transition frequency of 0.8 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6261
Bipolar Transistors - BJT 2N6261
Bipolar Transistors - BJT NPN 4.0A 90Vcbo 80Vceo 0.5Vce

Bipolar Transistors - BJT NPN 4.0A 90Vcbo 80Vceo 0.5Vce

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N6261
Product Name Bipolar Transistors - BJT
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