The 2N6076 is a silicon PNP transistor for general purpose applications, housed in a TO-92 package. It has a collector-base voltage rating of 25 V, a collector-emitter voltage of 25 V, a continuous collector current of 100 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Voltage gain (hFE) ranges from 100 to 500 at VCE=10 V and IC=10 mA. The transition frequency is 200 MHz. The collector-emitter saturation voltage is 0.25 V at IC=10 mA and IB=1.0 mA.
25V 100MA 625MW TH TRANSISTOR-SM
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N6076PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |