Central Semiconductor Corp. Single Bipolar Transistors 2N6076 PBFREE

Description
25V 100MA 625MW TH TRANSISTOR-SM
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Description
25V 100MA 625MW TH TRANSISTOR-SM
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Datasheet
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The 2N6076 is a silicon PNP transistor for general purpose applications, housed in a TO-92 package. It has a collector-base voltage rating of 25 V, a collector-emitter voltage of 25 V, a continuous collector current of 100 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Voltage gain (hFE) ranges from 100 to 500 at VCE=10 V and IC=10 mA. The transition frequency is 200 MHz. The collector-emitter saturation voltage is 0.25 V at IC=10 mA and IB=1.0 mA.

Datasheet Summary
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The 2N6076 is a silicon PNP transistor for general purpose applications, housed in a TO-92 package. It has a collector-base voltage rating of 25 V, a collector-emitter voltage of 25 V, a continuous collector current of 100 mA, and a power dissipation of 625 mW. The operating and storage junction temperature range is -65 to +150 °C. Voltage gain (hFE) ranges from 100 to 500 at VCE=10 V and IC=10 mA. The transition frequency is 200 MHz. The collector-emitter saturation voltage is 0.25 V at IC=10 mA and IB=1.0 mA.

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Single Bipolar Transistors - 1514-2N6076PBFREE-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1514-2N6076PBFREE-ND
Single Bipolar Transistors 1514-2N6076PBFREE-ND
25V 100MA 625MW TH TRANSISTOR-SM

25V 100MA 625MW TH TRANSISTOR-SM

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1514-2N6076PBFREE-ND
Product Name Single Bipolar Transistors
Polarity PNP
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