Central Semiconductor Corp. Single Bipolar Transistors 2N6076 APM PBFREE

The 2N6076 is a silicon PNP transistor designed for general purpose applications in a TO-92 package. It has a collector-base voltage rating of 25 V, a collector-emitter voltage rating of 25 V, and a continuous collector current of 100 mA. The power dissipation is rated at 625 mW. The operating and storage junction temperature ranges from -65 to +150 °C. Current gain (hFE) ranges from 100 to 500 at VCE=10 V and IC=10 mA. The saturation voltage VCE(sat) is 0.25 V at IC=10 mA and IB=1.0 mA, with a base-emitter saturation voltage of 0.80 V. The transition frequency fT is 200 MHz at VCB=5.0 V and IC=2.0 mA. The output capacitance Cob is 1.0 to 13 pF at VCB=10 V and f=1.0 MHz.