Central Semiconductor Corp. Bipolar Transistors - BJT 2N5886

The 2N5886 is an NPN silicon power transistor in a TO-3 case, designed for power amplifier and switching applications. It has a collector-base and collector-emitter voltage rating of 80 V, an emitter-base voltage of 5.0 V, and can handle a continuous collector current of 25 A with a maximum power dissipation of 200 W. Thermal resistance from junction to case is 0.875 °C/W, and the operating junction temperature range is -65 to +200 °C. At 25 A collector current and 6.25 A base current, the collector-emitter saturation voltage is 4.0 V and the base-emitter saturation voltage is 2.5 V. The current gain (hFE) is 4.0 at 25 A, and the transition frequency is 4.0 MHz. Output capacitance is 500 pF at 10 V reverse bias. RoHS compliant.