Central Semiconductor Corp. Single Bipolar Transistors 2N5823 TRE TIN/LEAD

The 2N5823 is a PNP silicon transistor in a TO-92-18R package, designed for general purpose amplifier applications requiring high collector current. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 750 mA, and a power dissipation of 625 mW at 25°C. The device operates with a junction temperature range of -65°C to +150°C and has a thermal resistance of 200°C/W. Current gain (hFE) ranges from 25 at 500 mA to 100-250 at 2 mA. The collector-base voltage is 70 V, emitter-base voltage is 5.0 V, and peak collector current is 1.0 A. Saturation voltage is 0.75 V at 500 mA collector current and 50 mA base current. The transition frequency is 120 MHz.