Central Semiconductor Corp. Single Bipolar Transistors 2N5823 APM TIN/LEAD

The 2N5823 is a PNP silicon transistor in a TO-92-18R case, designed for general purpose amplifier applications requiring high collector current. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 750 mA, and a power dissipation of 625 mW at 25°C. The device operates with a junction temperature range of -65°C to +150°C and has a thermal resistance of 200 °C/W. The transistor exhibits a current gain (hFE) of 25 at IC=500 mA and a transition frequency of 120 MHz. The package is epoxy molded with pinout: 1-collector, 2-base, 3-emitter.