Central Semiconductor Corp. Single Bipolar Transistors 2N5822 APM TIN/LEAD

The 2N5822 is an NPN silicon transistor in a TO-92-18R package, designed for general purpose amplifier applications requiring high collector current. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 750 mA, and a power dissipation of 625 mW at 25°C. The device has a current gain (hFE) ranging from 100 to 250 at IC=2.0 mA and 25 at IC=500 mA, with a transition frequency of 120 MHz. Operating and storage junction temperatures range from -65°C to +150°C. The part is epoxy molded and complies with RoHS requirements when ordered with the PBFREE suffix; the TIN/LEAD variant indicates a leaded plating option.