Central Semiconductor Corp. JFETs 2N5486 TRE TIN/LEAD

The 2N5486 is a silicon N-channel JFET designed for RF amplifier and mixer applications in the VHF/UHF frequency range, housed in a TO-92 case. It has a drain-gate voltage rating of 25 V, a gate-source voltage rating of 25 V, a maximum drain current of 30 mA, and a continuous gate current of 10 mA. Power dissipation is rated at 310 mW. The device has a drain-source saturation current (IDSS) of 8.0 to 20 mA at VDS=15 V, a gate-source cutoff voltage (VGS(off)) of 2.0 to 6.0 V, a forward transconductance (|yfs|) of 4.0 to 8.0 mS at VDS=15 V and VGS=0, and a gate-source input capacitance (Ciss) of 5.0 pF. Operating and storage junction temperatures range from -65°C to +150°C. The part is available with Tin/Lead plating, as indicated by the TIN/LEAD suffix.