The 2N5460 is a silicon P-channel JFET for low-level amplifier applications, packaged in a TO-92 case. It has a drain-gate voltage rating of 40 V, a reverse gate-source voltage of 40 V, a continuous gate current of 10 mA, and a power dissipation of 310 mW. The operating and storage junction temperature ranges from -65 to +150 °C. Electrical characteristics include an IDSS range of 1.0 to 5.0 mA at VDS=15 V, a VGS(OFF) range of 0.75 to 6.0 V, and a transconductance |yfs| of 1.0 to 4.0 kμS. The part meets the marking and pinout configuration specified for the 2N5460 series.
JFET P-Ch 40V JFET 40Vgsr 10mA 310mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N5460 TIN/LEAD |
| Product Name | JFET |
| Transistor Type | JFET |
