Central Semiconductor Corp. Bipolar Transistors - BJT 2N5415

The 2N5415 is a silicon PNP transistor in a TO-39 case, designed for high-voltage consumer and industrial applications. It has a collector-base voltage rating of 200 V, a collector-emitter voltage rating of 200 V, and a continuous collector current of 1.0 A. The power dissipation is 1.0 W, and the operating and storage junction temperature ranges from -65°C to +200°C. The current gain (hFE) ranges from 30 to 150 at VCE=10 V and IC=50 mA. The transistor meets the TO-39 mechanical outline with emitter, base, and collector leads in that order.