Central Semiconductor Corp. Single Bipolar Transistors 2N5366 TRE TIN/LEAD

The 2N5366 is a silicon PNP epitaxial planar transistor in a TO-92 package for general purpose switching and amplifier applications. It has a maximum collector-base voltage of 40 V, collector-emitter voltage of 40 V, and continuous collector current of 300 mA. Power dissipation is 625 mW with a thermal resistance of 200 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. Current gain (hFE) is 80 to 200 at VCE=10 V and IC=2.0 mA, and 100 to 300 at VCE=1.0 V and IC=50 mA. Collector-emitter saturation voltage is 0.25 V at IC=50 mA and IB=2.5 mA, and 1.0 V at IC=300 mA and IB=30 mA. The base-emitter saturation voltage is 1.1 V at IC=50 mA and IB=2.5 mA, and 2.0 V at IC=300 mA and IB=30 mA. Transition frequency is 250 MHz at VCE=10 V and IC=2.0 mA.