Central Semiconductor Corp. Single Bipolar Transistors 2N5366 TRE PBFREE

The 2N5366 is a silicon PNP epitaxial planar transistor in a TO-92 case for general purpose switching and amplifier applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage of 40 V, and a continuous collector current of 300 mA. Power dissipation is 625 mW with a thermal resistance of 200 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. Current gain (hFE) varies from 80 to 300 depending on bias conditions, and transition frequency is 250 MHz at 2 mA collector current. The device is marked with its full part number and has a lead configuration of emitter, base, collector from left to right.