Central Semiconductor Corp. Single Bipolar Transistors 2N5322 TIN/LEAD

The 2N5322 is a PNP silicon switching transistor in a TO-39 package, rated for a collector-emitter voltage of 75 V, a continuous collector current of 2.0 A, and a power dissipation of 10 W. It has a maximum collector-base voltage of 100 V, an emitter-base voltage of 5.0 V, and operates from -65°C to +200°C. Thermal resistance is 17.5 °C/W from junction to case and 175 °C/W from junction to ambient. The saturation voltage at 500 mA collector current and 50 mA base current is up to 0.7 V, with a minimum hFE of 40 at 500 mA and 4.0 V collector-emitter bias. Switching times are specified up to 100 ns turn-on and 1.0 μs turn-off under defined conditions.