Central Semiconductor Corp. Single Bipolar Transistors 2N5306 TIN/LEAD

The 2N5306 is an NPN Darlington transistor in a TO-92-3 package, designed for high gain amplifier applications. It has a collector-emitter voltage rating of 25 V, a continuous collector current of 300 mA, and a power dissipation of 625 mW. The device operates with a junction temperature range of -65°C to +150°C and has a thermal resistance of 200°C/W. Current gain (hFE) ranges from 7.0K to 70K at 2.0 mA collector current. The transition frequency is 60 MHz. The part is marked with its full part number and is compliant with RoHS standards when ordered without the TIN/LEAD suffix.