Central Semiconductor Corp. Single Bipolar Transistors 2N5210 PBFREE

The 2N5210 is an NPN silicon transistor designed for high gain and low noise applications. It features a TO-92 package with dimensions of 4.45 to 5.21 mm in diameter and 12.70 mm in length. The device has a collector-emitter voltage rating of 50 V, a collector current of 50 mA, and a power dissipation of 350 mW. It operates with a junction temperature range of -65 to +150°C and has a thermal resistance of 357°C/W. The current gain (hFE) ranges from 200 to 600 at VCE=5.0 V and IC=100 µA, with a transition frequency of 30 MHz. The emitter, base, and collector leads are configured as per the TO-92-3 standard.