The 2N5089 is a silicon NPN transistor designed for low-level, low-noise amplifier applications in a TO-92-3 package. It has a collector-emitter voltage rating of 25 V, a continuous collector current of 50 mA, and a power dissipation of 625 mW. The device operates with a junction temperature range of -65°C to +150°C and has a thermal resistance of 200°C/W. Current gain (hFE) ranges from 400 to 1,200 at VCE=5.0 V and IC=0.1 mA, with a transition frequency of 50 MHz. The lead finish variant PBFREE indicates compliance with lead-free requirements, consistent with the manufacturer's suffix guidelines for Pb-free plating.
Bipolar (BJT) Transistor NPN 25V 50mA 50MHz 625mW Through Hole TO-92-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N5089PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |