The 2N5058 is a silicon NPN epitaxial planar transistor designed for high voltage general purpose amplifier applications in a TO-39 package. It has a collector-base voltage rating of 300 V, a collector-emitter voltage rating of 300 V, and a continuous collector current of 150 mA. The power dissipation is 1.0 W at 25°C ambient temperature, with a thermal resistance of 150 °C/W. The transition frequency is 160 MHz, and the current gain (hFE) ranges from 35 to 150 at 30 mA collector current. The operating and storage junction temperature range is -65 to +200 °C. The device is compliant with RoHS standards when ordered with the PBFREE suffix.
Bipolar (BJT) Transistor NPN 300V 150mA 160MHz 1W Through Hole TO-39
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N5058PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |