Central Semiconductor Corp. Bipolar Transistors - BJT 2N4424

The 2N4424 is an NPN silicon epitaxial planar transistor designed for general-purpose amplifier applications. It is packaged in a TO-92 case with a maximum collector-base voltage of 60 V, collector-emitter voltage of 40 V, and continuous collector current of 500 mA. Power dissipation is rated at 625 mW with a thermal resistance of 200 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. Current gain (hFE) ranges from 180 to 540 at VCE=4.5 V and IC=2.0 mA. Collector-emitter saturation voltage is 0.30 V at IC=50 mA and IB=3.0 mA. The device meets RoHS compliance with lead-free plating options available.