Central Semiconductor Corp. JFET 2N4416

The 2N4416 is an N-channel silicon JFET designed for VHF amplifier and mixer applications, housed in a TO-72 case. It has a maximum gate-drain, gate-source, and drain-source voltage of 30 V, a power dissipation of 300 mW, and an operating and storage junction temperature range of -65 to +200 °C. The drain-source saturation current IDSS ranges from 5.0 to 15 mA at VDS=15 V and VGS=0. The forward transconductance gFS is between 4,500 and 7,500 μS at 1 kHz. At 100 MHz, the power gain Gps is typically 18 dB, and the noise figure NF is up to 2.0 dB at ID=5.0 mA and RG=1.0 kΩ.