Central Semiconductor Corp. Single Bipolar Transistors 2N4123 PBFREE

The 2N4123 is an NPN silicon bipolar transistor in a TO-92 package, designed for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 200 mA, and a power dissipation of 625 mW at 25 °C. The thermal resistance from junction to ambient is 200 °C/W. The transition frequency is 250 MHz at 10 mA collector current and 20 V collector-emitter voltage. The current gain (hFE) ranges from 50 to 150 at 2 mA collector current and 1 V collector-emitter voltage. The TO-92 case has leads configured as emitter, base, and collector. The device operates and stores between -65 °C and +150 °C.