Central Semiconductor Corp. Bipolar RF Transistors 2N3866 PBFREE

The 2N3866 and 2N3866A are silicon NPN RF transistors in a TO-39 hermetically sealed package, designed for high-frequency amplifier and oscillator applications. The device has a collector-emitter voltage rating of 30 V, a continuous collector current of 400 mA, and a power dissipation of 5.0 W at TC=25°C. The transition frequency is 500 MHz for the 2N3866 and 800 MHz for the 2N3866A. The gain (hFE) ranges from 10 to 200 at IC=50 mA for the 2N3866, and 25 to 200 for the 2N3866A. The collector-base voltage is 55 V, and the emitter-base voltage is 3.5 V. The operating and storage junction temperature range is -65°C to +200°C. The thermal resistance is 35 °C/W.