Central Semiconductor Corp. Bipolar Transistor Arrays 2N3810A

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6
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Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6
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Datasheet
Datasheet Summary
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The 2N3810A is a dual PNP bipolar transistor in a TO-78-6 hermetically sealed metal case, designed for differential amplifier applications. It has a collector-base voltage rating of 60 V, a continuous collector current of 50 mA, and a total power dissipation of 600 mW for both transistors. The operating and storage junction temperature range is -65 °C to +200 °C. The transistors exhibit matched characteristics with a base-emitter voltage mismatch of ≤1.5 mV at IC=100 μA. The transition frequency is specified up to 500 MHz. This part is classified as End of Life (EOL) and is no longer in production.

Datasheet Summary
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The 2N3810A is a dual PNP bipolar transistor in a TO-78-6 hermetically sealed metal case, designed for differential amplifier applications. It has a collector-base voltage rating of 60 V, a continuous collector current of 50 mA, and a total power dissipation of 600 mW for both transistors. The operating and storage junction temperature range is -65 °C to +200 °C. The transistors exhibit matched characteristics with a base-emitter voltage mismatch of ≤1.5 mV at IC=100 μA. The transition frequency is specified up to 500 MHz. This part is classified as End of Life (EOL) and is no longer in production.

Suppliers

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Product
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Supplier Links
Bipolar Transistor Arrays - 2N3810A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
2N3810A-ND
Bipolar Transistor Arrays 2N3810A-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2N3810A-ND
Product Name Bipolar Transistor Arrays
Polarity PNP
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