Central Semiconductor Corp. Bipolar Transistor Arrays 2N3807

Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - 2N3807-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
2N3807-ND
Bipolar Transistor Arrays 2N3807-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 100MHz 600mW Through Hole TO-78-6

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TRANSISTORS - Transistors (BJT) - Arrays - 2N3807 - 1123789-2N3807 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - 2N3807
1123789-2N3807
TRANSISTORS - Transistors (BJT) - Arrays - 2N3807 1123789-2N3807
Manufacturer: Central Semiconductor Corp Win Source Part Number: 1123789-2N3807 Packaging: Bulk Mounting Style: Through Hole Transistor Type: 2 PNP (Dual) Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-78-6 Status: Obsolete Manufacturer Homepage: www.centralsemi.com Manufacturer Package: TO-78-6 Metal Can Current - Collector (Ic) (Maximum): 50mA Voltage - Collector Emitter Breakdown (Maximum): 60V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) DC Current Gain (hFE) (Minimum) at Ic, Vce: 300 at 1mA, 5V Maximum Power: 600mW

Manufacturer: Central Semiconductor Corp
Win Source Part Number: 1123789-2N3807
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: 2 PNP (Dual)
Frequency - Transition: 100MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-78-6
Status: Obsolete
Manufacturer Homepage: www.centralsemi.com
Manufacturer Package: TO-78-6 Metal Can
Current - Collector (Ic) (Maximum): 50mA
Voltage - Collector Emitter Breakdown (Maximum): 60V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
DC Current Gain (hFE) (Minimum) at Ic, Vce: 300 at 1mA, 5V
Maximum Power: 600mW

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors RF Transistors
Product Number 2N3807-ND 1123789-2N3807
Product Name Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - 2N3807
Polarity PNP PNP
Package Type TO-78-6 Metal Can SOT3
Packing Method Bulk; Bulk
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