Central Semiconductor Corp. Single Bipolar Transistors 2N3791 PBFREE

The 2N3791 is a silicon PNP power transistor in a TO-3 case, designed for medium speed switching and amplifier applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 10 A, and a power dissipation of 150 W. The thermal resistance from junction to case is 1.17 °C/W. The collector-emitter saturation voltage is 1.0 V at 5.0 A collector current and 500 mA base current. The DC current gain ranges from 50 to 180 at a collector current of 1.0 A and a collector-emitter voltage of 2.0 V. The transition frequency is 4.0 MHz. The operating and storage junction temperature ranges from -65 °C to 200 °C. The device is packed in antistatic coated plastic sleeves, with a standard quantity of 20 per sleeve.