Central Semiconductor Corp. Single Bipolar Transistors 2N3725 PBFREE

NPN silicon transistor in TO-39 package for high voltage, high current, high speed switching applications. Collector-emitter voltage is 50 V, continuous collector current is 1.2 A, and power dissipation is 0.8 W at 25°C. Current gain (hFE) ranges from 30 to 150 depending on operating conditions. Switching times are specified with collector current up to 1.0 A. Transition frequency is 300 MHz. Junction temperature range is -65°C to +200°C.