Central Semiconductor Corp. Single Bipolar Transistors 2N3715 PBFREE

The 2N3715 is an NPN silicon power transistor in a TO-3 hermetically sealed metal package, designed for medium speed switching and amplifier applications. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 10 A, and a power dissipation of 150 W. The thermal resistance from junction to case is 1.17 °C/W. The operating and storage junction temperature ranges from -65 to +200 °C. The transistor has a current gain (hFE) of 50 to 150 at VCE=2.0 V and IC=1.0 A, and a collector-emitter saturation voltage of 0.8 V at IC=5.0 A and IB=0.5 A. The transition frequency is 4.0 MHz. Switching times are tr=0.4 µs, ts=0.3 µs, and tf=0.4 µs under specified test conditions.