The 2N3707 is a silicon NPN transistor designed for low-noise, low-level applications. It is packaged in a TO-92 case with pinout: emitter, collector, base. Maximum ratings include a collector-base voltage of 30 V, collector-emitter voltage of 30 V, emitter-base voltage of 6.0 V, continuous collector current of 200 mA, and power dissipation of 625 mW. Operating and storage junction temperatures range from -65 to +150 °C. The device has a noise figure of 5.0 dB under specified test conditions. Current gain (hFE) at VCE=5.0 V and IC=100 µA ranges from 100 to 400.
Bipolar Transistors - BJT NPN Gen Pur SS
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N3707 |
| Product Name | Bipolar Transistors - BJT |
