Central Semiconductor Corp. Single Bipolar Transistors 2N3707 TRE TIN/LEAD

The 2N3707 is a silicon NPN transistor designed for low-noise, low-level applications, housed in a TO-92 package. It has a maximum collector-base voltage of 30 V, collector-emitter voltage of 30 V, and continuous collector current of 200 mA. Power dissipation is rated at 625 mW. The operating and storage junction temperature range is -65 to +150°C. The device features a noise figure of 5.0 dB under specified test conditions and a current gain (hFE) range of 100 to 400 at VCE=5.0V and IC=100μA.