Central Semiconductor Corp. Bipolar Transistors - BJT 2N3502

2N3502 is a PNP bipolar junction transistor for amplification and switching, housed in a TO-39 case. It has a collector-emitter voltage rating of 60 V, a collector-base voltage rating of 60 V, and an emitter-base voltage rating of 5.0 V. The maximum collector current is 100 mA, with a DC current gain (hFE) ranging from 300 to 150 at 10 mA collector current and 10 V collector-emitter voltage. The saturation voltage is 0.40 V at 10 mA collector current and 150 mA base current. The transition frequency is 200 MHz, and the collector cutoff current is 0.01 μA at 50 V collector-base voltage. The device has a collector-emitter leakage current (ICES) of 0.01 μA and a collector-base leakage current (ICER) of 0.01 μA.