The 2N3117 is an NPN silicon transistor designed for general purpose amplifier applications, housed in a TO-18 package. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, a continuous collector current of 50 mA, and a power dissipation of 360 mW. The operating and junction temperature range is from -65 °C to +200 °C. Current gain (hFE) varies from 100 to 500 depending on collector current and temperature, with minimal collector-emitter saturation voltage of 0.35 V at IC=1.0 mA. The device is available in Pb-free plating as indicated by the PBFREE suffix.
Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N3117PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |