Central Semiconductor Corp. Single Bipolar Transistors 2N3117 PBFREE

Description
Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18
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Description
Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18
Request a Quote
Datasheet
Datasheet Summary
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The 2N3117 is an NPN silicon transistor designed for general purpose amplifier applications, housed in a TO-18 package. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, a continuous collector current of 50 mA, and a power dissipation of 360 mW. The operating and junction temperature range is from -65 °C to +200 °C. Current gain (hFE) varies from 100 to 500 depending on collector current and temperature, with minimal collector-emitter saturation voltage of 0.35 V at IC=1.0 mA. The device is available in Pb-free plating as indicated by the PBFREE suffix.

Datasheet Summary
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The 2N3117 is an NPN silicon transistor designed for general purpose amplifier applications, housed in a TO-18 package. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, a continuous collector current of 50 mA, and a power dissipation of 360 mW. The operating and junction temperature range is from -65 °C to +200 °C. Current gain (hFE) varies from 100 to 500 depending on collector current and temperature, with minimal collector-emitter saturation voltage of 0.35 V at IC=1.0 mA. The device is available in Pb-free plating as indicated by the PBFREE suffix.

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Single Bipolar Transistors - 1514-2N3117PBFREE-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1514-2N3117PBFREE-ND
Single Bipolar Transistors 1514-2N3117PBFREE-ND
Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18

Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1514-2N3117PBFREE-ND
Product Name Single Bipolar Transistors
Polarity NPN
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