Central Semiconductor Corp. Bipolar Transistors - BJT 2N3054A

Description
Bipolar Transistors - BJT NPN 90Vcbo 90Vcev 60Vcer 4.0A
Description
Bipolar Transistors - BJT NPN 90Vcbo 90Vcev 60Vcer 4.0A
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Datasheet Summary
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The 2N3054A is a silicon NPN power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 90 V, collector-emitter voltage of 90 V, and continuous collector current of 4.0 A. Power dissipation is 75 W with a thermal resistance (Junction-to-Case) of 2.33 °C/W. The operating and storage junction temperature range is -65 to +200 °C.

Datasheet Summary
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The 2N3054A is a silicon NPN power transistor in a TO-66 hermetically sealed metal case, designed for general-purpose amplifier and switching applications. It has a collector-base voltage rating of 90 V, collector-emitter voltage of 90 V, and continuous collector current of 4.0 A. Power dissipation is 75 W with a thermal resistance (Junction-to-Case) of 2.33 °C/W. The operating and storage junction temperature range is -65 to +200 °C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N3054A
Bipolar Transistors - BJT 2N3054A
Bipolar Transistors - BJT NPN 90Vcbo 90Vcev 60Vcer 4.0A

Bipolar Transistors - BJT NPN 90Vcbo 90Vcev 60Vcer 4.0A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N3054A
Product Name Bipolar Transistors - BJT
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