Central Semiconductor Corp. Bipolar Transistors - BJT 2N2925

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Bipolar Transistors - BJT NPN Gen Pur SS
Description
Bipolar Transistors - BJT NPN Gen Pur SS
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The 2N2925 is an NPN low-noise bipolar transistor in a TO-92 package, designed for amplification and switching applications. It has a collector-base voltage rating of 25 V, a collector-emitter voltage rating of 25 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 100 mA, with a minimum DC current gain (hFE) of 235 at 25 V collector-emitter voltage and 2.0 mA collector current. The saturation voltage is 4.50 V at a collector current of 2.0 mA and a base current of 10 mA. The collector-off current is 100 nA at 25 V collector-base voltage. It has a transition frequency of 160 MHz and a collector-emitter saturation voltage of 2.8 dB. The device meets RoHS standards.

Datasheet Summary
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The 2N2925 is an NPN low-noise bipolar transistor in a TO-92 package, designed for amplification and switching applications. It has a collector-base voltage rating of 25 V, a collector-emitter voltage rating of 25 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 100 mA, with a minimum DC current gain (hFE) of 235 at 25 V collector-emitter voltage and 2.0 mA collector current. The saturation voltage is 4.50 V at a collector current of 2.0 mA and a base current of 10 mA. The collector-off current is 100 nA at 25 V collector-base voltage. It has a transition frequency of 160 MHz and a collector-emitter saturation voltage of 2.8 dB. The device meets RoHS standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N2925
Bipolar Transistors - BJT 2N2925
Bipolar Transistors - BJT NPN Gen Pur SS

Bipolar Transistors - BJT NPN Gen Pur SS

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N2925
Product Name Bipolar Transistors - BJT
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