Infineon Technologies AG Bipolar Transistors - BJT BC817K40E6327XT

Description
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5
Description
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5
Datasheet
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NPN silicon bipolar junction transistor for general audio frequency applications, available in SOT23 packaging, with a maximum collector-emitter voltage of 45 V, collector current of 500 mA, and total power dissipation of 500 mW at case temperature ≤115 °C. Features a minimum DC current gain of 250 at 100 mA collector current and collector-emitter saturation voltage of 0.7 V at 500 mA collector and 50 mA base current. Qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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NPN silicon bipolar junction transistor for general audio frequency applications, available in SOT23 packaging, with a maximum collector-emitter voltage of 45 V, collector current of 500 mA, and total power dissipation of 500 mW at case temperature ≤115 °C. Features a minimum DC current gain of 250 at 100 mA collector current and collector-emitter saturation voltage of 0.7 V at 500 mA collector and 50 mA base current. Qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC817K40E6327XT
Bipolar Transistors - BJT BC817K40E6327XT
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5

Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC817K40E6327XT
Product Name Bipolar Transistors - BJT
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