Central Semiconductor Corp. Bipolar Transistors - BJT 2N2896

2N2896 is an NPN bipolar junction transistor for amplification and switching, housed in a TO-18 package. It has a collector-base voltage rating of 140 V, a collector-emitter voltage rating of 90 V, and an emitter-base voltage rating of 7.0 V. The continuous collector current is 150 mA, with a DC current gain (hFE) of at least 60 at 10 mA collector current and 10 V collector-emitter voltage. The saturated collector-emitter voltage is 0.6 V at 150 mA collector current. The collector cutoff current is 0.01 mA at 60 V collector-base voltage. The transition frequency is 120 MHz, the output capacitance is 15 pF, and the noise figure is 5.0 dB.