Central Semiconductor Corp. Single Bipolar Transistors 2N2896 TIN/LEAD

The 2N2896 is a silicon NPN epitaxial planar transistor for small signal and general purpose applications, housed in a TO-18 package. It has a collector-emitter voltage rating of 90 V, a collector-base voltage of 140 V, and a continuous collector current of 1.0 A. Power dissipation is rated at 500 mW at 25°C ambient temperature, increasing to 1.8 W with a case temperature of 25°C. The transistor operates with a junction temperature range of -65°C to +200°C. Current gain (hFE) ranges from 60 to 200 at VCE=10 V and IC=150 mA. Transition frequency (fT) is 120 MHz at IC=50 mA and VCE=10 V. The part is RoHS compliant when ordered with the PBFREE suffix; the TIN/LEAD suffix indicates tin/lead plating, which alters the termination but not the core electrical specifications.