Central Semiconductor Corp. Bipolar Transistors - BJT 2N2895

The 2N2895 is a silicon NPN epitaxial planar transistor designed for small signal and general purpose applications, housed in a TO-18 package. It has a collector-base voltage rating of 120 V, collector-emitter voltage of 65 V, and continuous collector current of 1.0 A. Power dissipation is 500 mW at ambient temperature and 1.8 W at a case temperature of 25°C. The operating and storage junction temperature ranges from -65°C to +200°C. Current gain (hFE) ranges from 40 to 120 at VCE=10 V and IC=150 mA. Transition frequency (fT) is 120 MHz at IC=50 mA. Collector-base capacitance (Cob) is 15 pF at VCB=10 V. Noise figure is 8.0 dB maximum at VCE=10 V, IC=0.3 mA, and RS=500 Ω.