Central Semiconductor Corp. Single Bipolar Transistors 2N2895 TIN/LEAD

The 2N2895 is a silicon NPN epitaxial planar transistor designed for small signal and general purpose applications, housed in a TO-18 package. It has a collector-emitter voltage rating of 65 V, a continuous collector current of 1.0 A, and a power dissipation of 500 mW at 25°C. The device features a collector-base voltage of 120 V, an emitter-base voltage of 7.0 V, and a junction temperature range of -65°C to +200°C. Current gain (hFE) varies from 40 to 120 at VCE=10 V and IC=150 mA, with a transition frequency of 120 MHz at IC=50 mA. Collector leakage current is specified up to 2.0 nA at VCB=60 V and 25°C. The TO-18 case has pin 1 as emitter, pin 2 as base, and pin 3 as collector.