Central Semiconductor Corp. Single Bipolar Transistors 2N2895 PBFREE

The 2N2895 is a silicon NPN epitaxial planar transistor designed for small signal and general purpose applications, housed in a TO-18 case with a maximum collector-emitter voltage of 65 V, continuous collector current of 1.0 A, and power dissipation of 500 mW at 25°C. The device features a collector-base voltage rating of 120 V, an emitter-base voltage of 7.0 V, and operates across a junction temperature range of -65°C to +200°C. Current gain (hFE) varies between 40 and 120 at VCE=10 V and IC=150 mA, with a transition frequency of 120 MHz at IC=50 mA. The part is RoHS compliant when ordered with the PBFREE suffix, indicating lead-free plating.