Central Semiconductor Corp. Bipolar Transistors - BJT 2N2845

NPN silicon transistor for saturation switching in small signal applications, housed in a TO-18 metal case. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 30 V, and emitter-base voltage of 5.0 V. The device supports a continuous collector current of up to 150 mA, with a saturation voltage of 1.0 V at 10 mA collector current. It features a minimum current gain of 120 at 10 mA collector current and a transition frequency of 250 MHz. The collector-base capacitance is 8.0 pF, with turn-on and turn-off times of 40 ns. It meets RoHS compliance and is classified as a small signal transistor for switching applications.