Central Semiconductor Corp. Single Bipolar Transistors 2N2270 PBFREE

Description
Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Through Hole TO-39
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Description
Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Through Hole TO-39
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Datasheet
Datasheet Summary
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The 2N2270 is an NPN silicon transistor in a TO-39 hermetically sealed package, designed for general purpose amplifier applications. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 1.0 A, and a power dissipation of 1.0 W at 25°C. The device has a transition frequency of 100 MHz, a current gain (hFE) ranging from 50 to 200 at IC=150mA, and a collector-emitter saturation voltage of 0.9 V. The operating and storage junction temperature ranges from -65°C to +200°C. The PBFREE suffix indicates lead-free plating, compliant with RoHS requirements.

Datasheet Summary
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The 2N2270 is an NPN silicon transistor in a TO-39 hermetically sealed package, designed for general purpose amplifier applications. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 1.0 A, and a power dissipation of 1.0 W at 25°C. The device has a transition frequency of 100 MHz, a current gain (hFE) ranging from 50 to 200 at IC=150mA, and a collector-emitter saturation voltage of 0.9 V. The operating and storage junction temperature ranges from -65°C to +200°C. The PBFREE suffix indicates lead-free plating, compliant with RoHS requirements.

Suppliers

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Single Bipolar Transistors - 1514-2N2270PBFREE-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1514-2N2270PBFREE-ND
Single Bipolar Transistors 1514-2N2270PBFREE-ND
Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Through Hole TO-39

Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Through Hole TO-39

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 1514-2N2270PBFREE-ND
Product Name Single Bipolar Transistors
Polarity NPN
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