The 2N2270 is an NPN silicon transistor in a TO-39 hermetically sealed package, designed for general purpose amplifier applications. It has a collector-emitter voltage rating of 45 V, a continuous collector current of 1.0 A, and a power dissipation of 1.0 W at 25°C. The device has a transition frequency of 100 MHz, a current gain (hFE) ranging from 50 to 200 at IC=150mA, and a collector-emitter saturation voltage of 0.9 V. The operating and storage junction temperature ranges from -65°C to +200°C. The PBFREE suffix indicates lead-free plating, compliant with RoHS requirements.
Bipolar (BJT) Transistor NPN 45V 1A 100MHz 1W Through Hole TO-39
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N2270PBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |