The 2N2219A is a silicon NPN transistor designed for general purpose and switching applications, housed in a TO-39 package. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 800 mA, and a power dissipation of 800 mW at 25°C. The transistor features a minimum current gain (hFE) of 100 at VCE=10 V and IC=150 mA, and a transition frequency (fT) of 300 MHz. The emitter-base voltage is rated at 6.0 V, with saturation voltages of up to 1.0 V for collector-emitter and 2.0 V for base-emitter under high current conditions. Operating and storage junction temperatures range from -65°C to +200°C.
Bipolar (BJT) Transistor NPN 40V 800mA 300MHz 800mW Through Hole TO-39
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1514-2N2219APBFREE-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |