Central Semiconductor Corp. Bipolar Transistors - BJT 2N2219

The 2N2219 is an NPN silicon transistor designed for small signal general purpose and switching applications, housed in a TO-39 case. It has a collector-emitter voltage rating of 30 V, a collector-base voltage of 60 V, and a continuous collector current of 800 mA. Power dissipation is 800 mW at 25°C ambient temperature. Current gain (hFE) ranges from 100 to 300 at VCE=10 V and IC=150 mA. The transition frequency is 250 MHz, and the collector-emitter saturation voltage is 0.4 V at IC=150 mA and IB=15 mA. Operating and storage junction temperatures range from -65°C to +200°C.