Central Semiconductor Corp. Bipolar Transistors - BJT 2N2218

The 2N2218 is an NPN silicon transistor designed for general-purpose small-signal and switching applications, housed in a TO-39 package. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 30 V, and an emitter-base voltage rating of 5.0 V. The continuous collector current is 800 mA, with a power dissipation of 800 mW at 25℃ and 3.0 W at a case temperature of 25℃. The operating and storage junction temperature range is -65℃ to +200℃. The current gain (hFE) ranges from 20 to 120 at VCE=10 V and IC=150 mA. The transition frequency is 250 MHz, and the collector output capacitance is 8.0 pF at VCB=10 V and f=100 kHz. Saturation voltages are 0.4 V (VCE(SAT)) and 1.3 V (VBE(SAT)) under specified conditions.