BYTe Semiconductor Memory BY25Q128ESEIG(R)

Description
129 MBIT, 3.0V (2.7V TO 3.6V), -
Request a Quote Datasheet
Description
129 MBIT, 3.0V (2.7V TO 3.6V), -
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25Q128ESEIG(R)TR-ND - DigiKey
Thief River Falls, MN, United States
129 MBIT, 3.0V (2.7V TO 3.6V), -

129 MBIT, 3.0V (2.7V TO 3.6V), -

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25Q128ESEIG(R)TR-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - QMP29GL512P10TFIR20D - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits
View Details
2 suppliers
Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - 27S19ADM/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Density 0 kbits
Package Type DIP; CDIP16
View Details
4 suppliers
Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details