BYTe Semiconductor Memory BY25D40ESSIG(R)

Description
4 MBIT, 3.0V (2.7V TO 3.6V), -40
Request a Quote Datasheet
Description
4 MBIT, 3.0V (2.7V TO 3.6V), -40
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 5369-BY25D40ESSIG(R)TR-ND - DigiKey
Thief River Falls, MN, United States
4 MBIT, 3.0V (2.7V TO 3.6V), -40

4 MBIT, 3.0V (2.7V TO 3.6V), -40

Buy Now Datasheet

Technical Specifications

  DigiKey
Product Category Memory Chips
Product Number 5369-BY25D40ESSIG(R)TR-ND
Product Name Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 524313-006-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
SM28VLT32-HT 32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus - SM28VLT32SKGD3 - Texas Instruments
Specs
Memory Category Flash
Operating Temperature -55 to 210 C (-67 to 410 F)
Density 32000 kbits
View Details
7 suppliers
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 1 kbits
View Details